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| High Dynamic Range Low Noise GaAs FET August 2006 - Rev 03-Aug-06 CFB0301 Features Low-Noise Figure from 0.8 to 2.0 GHz High Gain High Intercept Point Highly Stable Easily Matched to 50 70 mil Package Applications Cellular Base Stations PCS Base Stations Industrial Data Networks Description Celeritek's CFB0301 is a high performance GaAs MESFET with 600 m gate width and 0.25 m gate length. The low noise figure and high intercept point of this device makes it well suited for use as the low-noise amplifier of the base station receiver in PCS, Japanese PHS, AMPS, GSM and other communications systems. The CFB0301 is in an industry-standard 70 mil package. It is surface mountable and available in tape and reel. Electrical Specifications (TA = 25C, 2 GHz) Parameters Conditions Min Typ Standard Deviation 4 Max Units Vd = 2V, Id = 25 mA Noise Figure 2 Associated Gain 2 Pout 1, 3 IP3 3 Id 3 Vd = 4V, Id = 30 mA Noise Figure 2 Associated Gain 2 Pout 1, 3 IP3 3 Id 3 Vd = 4V, Id = 70 mA Noise Figure 2 Associated Gain 2 Pout 1, 3 IP3 3 Id 3 Transconductance Saturated Drain Current Pinchoff Voltages Thermal Resistance @ Noise Figure P-1 +5 dBm POUT/Tone @ P-1 0.6 16 15.0 24 35 0.7 17 20.5 30 56 0.8 17 21 34 77 70 120 -2.5 140 150 -1.3 200 180 -0.5 0.08 0.4 0.4 0.9 0.9 dB dB dBm dBm mA dB dB dBm dBm mA dB dB dBm dBm mA mho mA V C/W @ Noise Figure P-1 +5 dBm POUT/Tone @ P-1 @ Noise Figure P-1 +5 dBm POUT/Tone @ P-1 Vds = 2 V, Vgs = 0 V Vds = 2 V, Vgs = 0 V Vds = 2 V, Ids = 1 mA @ Tcase = 150C liquid crystal test 16 20 32 Notes: 1. @ T case = 25C. Derate 5 mW/C for Tcase >25C. 2. Input matched for low noise. 3. Matched for power transfer. 4. Standard deviation based on 10 wafers randomly selected and is provided as an estimate of the distribution only. Trademarks are the property of their respected owners. Page 1 of 3 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. High Dynamic Range Low Noise GaAs FET August 2006 - Rev 03-Aug-06 CFB0301 Absolute Maximum Ratings Parameter Rn/50 Symbol Rating Gamma Opt Mag Ang Typical Noise Parameters (Vds = 4 V, Ids = 30 mA) Frequency (GHz) Fmin 1 (dB) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.4 0.4 0.4 0.4 0.4 0.4 0.5 0.5 0.5 0.5 0.6 0.6 0.6 0.6 0.5 0.5 0.5 0.5 0.5 0.5 27 29 32 35 38 41 45 49 54 60 0.19 0.17 0.18 0.18 0.17 0.16 0.15 0.15 0.14 0.13 Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Dissipation1 Channel Temperature Storage Temperature Vds Vgs Ids Pt Tch Tstg +8V -5V Idss 750 mW 175C -65C to +150C Note: 1. Fmin values reflect the circuit losses in the test fixture when matched to optimum noise figure. Typical Performance Optimum Noise Figure and Associated Gain vs Frequency Vds = 2V, Ids = 25 mA Associated Gain vs I ds Vds = 2V, Frequency = 2 GHz 2.5 25 25 Associated Gain (dB) Noise Figure (dB) 2.0 1.5 1.0 Associated Gain 20 15 10 Gain (dB) 20 15 10 5 0 10 Noise Figure 0.5 0 2 4 6 8 Frequency (GHz) 10 12 5 0 20 30 40 50 Ids (mA) 60 70 Optimum Noise Figure vs I ds & V ds Frequency = 2 GHz 2.5 2.0 1.5 1.0 0.5 2V 0.0 10 20 30 40 50 Ids (mA) 60 70 4V Typical Scattering Parameters (TA = 25C, VDS = 2 V, IDS = 25 mA) Frequency (GHz) S11 Mag Ang Mag (dB) S21 Ang MAG (dB) S12 ANG MAG S22 ANG 0.5 1.0 2.0 3.0 4.0 5.0 0.98 0.94 0.85 0.76 0.70 0.64 -20 -40 -76 -108 -130 -150 Noise Figure (dB) 7.17 6.90 6.00 5.00 4.30 3.83 161 148 119 95 75 55 0.02 0.03 0.05 0.07 0.08 0.09 78 70 52 38 30 20 0.42 0.41 0.36 0.32 0.30 0.27 -11 -24 -46 -65 -75 -85 Page 2 of 3 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. High Dynamic Range Low Noise GaAs FET August 2006 - Rev 03-Aug-06 CFB0301 Test Circuit Evaluation Board Schematic Evaluation Board Substrate: ER = 4.65 Thickness = 0.036 Transmission Lines (Dimensions in mm.): T1: 0.203 (W) x 11.55 (L) T2: 0.203 (W) x 5.05 (L) PB-CFB0301 Evaluation Board (SMA Connectors not shown) Evaluation Board Parts List Item Reference Designator Description Quantity Manufacturer Part Number 1 2 3 4 5 6 7 8 B21 C23 C21, C24, C26, C28-C37 C25 L26, L28 R21 R22, R23 R26 Chip ferrite bead 0805 Capacitor, 1000pF, 0603 Capacitor, 39pF, 0603 Capacitor, 0.01 F, 0603 Inductor, 82nH, INDA5T-3 Resistor, 5.6 Ohm, 0603 Resistor, 18 Ohm, 0603 Resistor, 8.2 Ohm, 0603 1 1 13 1 2 1 2 1 World Products Rohm Rohm Rohm Toko Dale Dale Dale HB-1H2012-260JT MCH185A102JK MCH185A039JK MCH185A103JK LL2012-F8NK RCWP575 560 RCWP575 181 RCWP575 820 Ordering Information The CFB0301GaAs FET is available in tape and reel. An evaluation board is also available. Ordering part numbers are listed. Function Package Part Number for Ordering CFB0301 Low-Noise high dynamic range FET 70 mil package CFB0301-000T Low-Noise high dynamic range FET 70 mil package in tape and reel PB-CFB0301 Evaluation Board Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 3 Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. |
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